byw99p/pi/w ? october 1999 ed : 2a high efficiency fast recovery rectifier diodes sot93 (plastic) byw99p-200 suited for smps very low forward losses negligible switching losses high surge current capability high avalanche energy capability insulated version top3i : insulating voltage = 2500 v dc capacitance = 12 pf description features dual center tap rectifier suited for switchmode power supply and high frequency dc to dc converters. packaged in sot93, top3i or to247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isolated top3i (plastic) byw99pi-200 symbol parameter value unit i f(rms) rms forward current per diode 35 a i f(av) average forward current d = 0.5 sot93 / to247 tc=120 c per diode 15 a top3i tc=115 c per diode 15 i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 200 a tstg tj storage and junction temperature range - 40 to + 150 - 40 to + 150 c c absolute maximum ratings symbol parameter value unit v rrm repetitive peak reverse voltage 200 v a1 k a2 to247 (plastic) byw99w-200 a1 k a2 1/6 obsolete product(s) - obsolete product(s)
symbol test conditions min. typ. max. unit i r * t j = 25 cv r = v rrm 20 m a t j = 100 c 1.5 ma v f ** t j = 125 ci f = 12 a 0.85 v t j = 125 ci f = 25 a 1.05 t j = 25 ci f = 25 a 1.15 pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2 % to evaluate the conduction losses use the following equation : p = 0.65 x i f(av) + 0.016 x i f 2 (rms) static electrical characteristics (per diode) symbol test conditions min. typ. max. unit trr t j = 25 ci f = 0.5a i r = 1a irr = 0.25a 25 ns i f = 1a v r = 30v di f /dt = -50a/ m s40 tfr t j = 25 ci f = 1a v fr = 1.1 x v f tr = 10 ns 15 ns v fp t j = 25 ci f = 1a tr = 10 ns 2 v recovery characteristics symbol parameter value unit rth (j-c) junction to case sot93 / to247 per diode 1.8 c/w total 1.0 top3i per diode 2.0 total 1.25 rth (c) coupling sot93 / to247 0.2 c/w top3i 0.5 when the diodes 1 and 2 are used simultaneously : tj-tc (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) thermal resistances byw99p/pi/w 2/6 obsolete product(s) - obsolete product(s)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 250 300 350 p=10w p=20w p=30w t i m =tp/t tp i m(a) fig.2 : peak current versus form factor. 0.1 1 10 100 200 tj=125 c o ifm(a) vfm(v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig.3 : forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 0 2.5 5 7.5 10 12.5 15 17.5 20 0 2.5 5 7.5 10 12.5 15 17.5 20 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 im t =0.5 t(s) i m(a) tc=25 c o tc=60 c o tc=115 c o fig.6 : non repetitive surge peak forward current versus overload duration. (top3i) 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 im t =0.5 t(s) i m(a) tc=25 c o tc=75 c o tc=120 c o fig.5 : non repetitive surge peak forward current versus overload duration. (sot93, to247) byw99p/pi/w 3/6 obsolete product(s) - obsolete product(s)
0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.7 : average current versus ambient temperature. ( d = 0.5) (sot93, to247) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.8 : average current versus ambient temperature. ( d = 0.5) (top3i) 110100 100 110 120 130 140 150 160 170 180 190 200 200 vr(v) f=1mhz tj=25 c o c(pf) fig.9 : junction capacitance versus reverse voltage applied (typical values). 110100 0 5 10 15 20 25 30 35 40 45 50 55 60 qrr(nc) 90%confidence if=if(av) tj=100 c o tj=25 c o dif/dt(a/us) fig.10 : recovery charges versus di f /dt. tj( c) qrr;irm[tj]/qrr;irm[tj=125 c] 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 irm qrr o o fig.12 : dynamic parameters versus junction temperature. 110100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 irm(a) dif/dt(a/us) 90%confidence tj=100 c o tj=25 c o if=if(av) fig.11 : peak reverse current versus dif/dt. byw99p/pi/w 4/6 obsolete product(s) - obsolete product(s)
package mechanical data sot93 marking : type number cooling method : c weight : 5.3 g recommended torque value : 0.8m.n maximum torque value : 1.0m.n ref. dimensions millimeters inches min. max. min. max. a 4.70 4.90 1.185 0.193 c 1.90 2.10 0.075 0.083 d 2.50 typ. 0.098 typ. d1 2.00 typ. 0.078 typ e 0.50 0.78 0.020 0.031 f 1.10 1.30 0.043 0.051 f3 1.75 typ 0.069 typ f4 2.10 typ. 0.083 typ. g 10.80 11.10 0.425 0.437 h 14.70 15.20 0.279 0.598 l 12.20 0.480 l2 16.20 0.638 l3 18.0 typ. 0.709 typ. l5 3.95 4.15 0.156 0.163 l6 31.00 typ. 1.220 typ. o 4.00 4.10 0.157 0.161 marking : type number cooling method : c weight : 4.7 g recommended torque value : 0.8m.n maximum torque value : 1.0m.n package mechanical data top3i (isolated) ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 l 4.08 4.17 0.161 0.164 p 1.20 1.40 0.047 0.055 r 4.60 typ. 0.181 typ byw99p/pi/w 5/6 obsolete product(s) - obsolete product(s)
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com marking : type number cooling method : c weight : 4.4 g recommended torque value : 0.8m.n maximum torque value : 1.0m.n package mechanical data to247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 byw99p/pi/w 6/6 obsolete product(s) - obsolete product(s)
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